Growth and physical characterization of high resistivity Fe: β-Ga₂O₃ crystals*

Abstract

High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe: β -Ga 2 O 3 single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe: β -Ga 2 O 3 single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe: β -Ga 2 O 3 crystal reached to 3.63 × 10 11 Ω ⋅cm. The high resistivity Fe: β -Ga 2 O 3 single crystals could be applied as the substrate for the high-power field effect transistors (FETs).