Recent advances in organic‐based materials for resistive memory applications

TLDR

Rapid data‑driven interaction demands memory electronics with lower power, larger capacity, faster speed, and higher density, yet conventional Si‑based storage cannot meet ultrahigh‑density needs, prompting the emergence of organic‑based resistive memory materials as promising next‑generation candidates. This review examines the memory device structure, switching types, mechanisms, and recent advances in organic resistive memory materials. It discusses device architectures, switching mechanisms, and the underlying physics of organic resistive memory devices. The review highlights the potential for multilevel storage and outlines current challenges and future prospects for organic resistive memory materials and devices. An image is included.

Abstract

Abstract With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory electronics. Nevertheless, the physical limitations of conventional Si‐based binary storage systems lag far behind the ultrahigh‐density requirements of post‐Moore information storage. In this regard, the pursuit of alternatives and/or supplements to the existing storage technology has come to the forefront. Recently, organic‐based resistive memory materials have emerged as promising candidates for next‐generation information storage applications, which provide new possibilities of realizing high‐performance organic electronics. Herein, the memory device structure, switching types, mechanisms, and recent advances in organic resistive memory materials are reviewed. In particular, their potential of fulfilling multilevel storage is summarized. Besides, the present challenges and future prospects confronted by organic resistive memory materials and devices are discussed. image