Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr_0.2Ti_0.8O₃/Co/Pt Heterostructure

Abstract

Abstract In the field of memory and spin‐logical devices, multiferroics have the potentials of low‐energy informational operation. A novel memory and logic device in a PbZr 0.2 Ti 0.8 O 3 /Co/Pt (PZT/Co/Pt) multiferroic heterostructure with perpendicular magnetic anisotropy (PMA) is proposed. The PMA of PZT/Co/Pt structure can be modulated via the PZT/Co interface by switching the polarization field in the PZT layer. Moreover, the anomalous Hall voltage (AHV) under downward polarization is about 63% higher than that under upward polarization at 50 K without magnetic field. Interestingly, this AHV modulation is reversible, fast, and nonvolatile. Furthermore, the multiferroic random access memory and logic device operations are demonstrated based on the ferroelectric‐modulated AHV, which can lower the operating current density. This nonvolatile manipulation via ferroelectric polarizations will offer a new pathway to improve spintronic and spin‐logical applications.