Design and fabrication of a SiN-Si dual-layer optical phased array chip

Abstract

A SiN-Si dual-layer optical phased array (OPA) chip is designed and fabricated. It combines the low loss of SiN with the excellent modulation performance of Si, which improves the performance of Si single-layer OPA. A novel optical antenna and an improved phase modulation method are also proposed, and a two-dimensional scanning range of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:mn>96</mml:mn> <mml:mo>°</mml:mo> <mml:mo>×</mml:mo> <mml:mn>14</mml:mn> <mml:mo>°</mml:mo> </mml:mrow> </mml:math> is achieved, which makes the OPA chip more practical.