Publication | Open Access
A high responsivity and controllable recovery ultraviolet detector based on a WO<sub>3</sub>gate AlGaN/GaN heterostructure with an integrated micro-heater
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Citations
61
References
2020
Year
Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringControllable Recovery UltravioletTungsten OxideGate Algan/gan HeterostructureElectronic EngineeringHigh ResponsivityApplied PhysicsAluminum Gallium NitrideGan Power DeviceOptoelectronic DevicesIntegrated CircuitsMicroelectronicsOptoelectronicsCategoryiii-v Semiconductor
A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO<sub>3</sub>) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time.
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