A High Mobility of Up to 13 cm²V⁻¹s⁻¹ in Dinaphttho-Thieno-Thiophene Single-Crystal Field-Effect Transistors via Self-Assembled Monolayer Selection

Abstract

By selecting the dielectrics that possess well-matched surface energy components with a semiconductor, the dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) single crystal FET with the mobility as high as 13 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> is obtained. This high mobility combined with a pregrown single crystal as well as the good stability of DNTT provides an opportunity for fundamental studies of organic electronics. These results provide a general criterion for selection of dielectric self-assembled monolayers for an optimized carrier mobility in single-crystal organic filed-effect transistors, and show a promising method to simplify the dielectric optimization process for the development of next-generation high-performance flexible electronics.