1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <i>p-n</i> Junction Termination

Abstract

In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p-n</i> junction termination (RPN). The SBD has a current output of 1 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{F}=2.5$ </tex-math></inline-formula> V, a low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{on}$ </tex-math></inline-formula> of 0.66 V ± 0.017 V, a low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{on,sp}$ </tex-math></inline-formula> of 1.4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , current ON/OFF ratio of over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{9}$ </tex-math></inline-formula> (−3 V~3 V). By introducing the RPN, the breakdown voltage can boost from 459 V to 1419 V, and power figure-of-merit (FOM) can reach 1438 MV/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . It is shown that the presence of the RPN with a suitable anode recess depth can generate an electric field (EF) opposite to the built-in EF at the center of the second top <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p-n</i> junction, which can decrease the EF peak intensity and make the electric field more uniformly distributed inside the device. Finally, the leakage current of the SBD is inhibited and the breakdown voltage is increased.