Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy

Sang-Hoon Bae, Kuangye Lu, Yimo Han, +18

Nature Nanotechnology

Materials ScienceGraphene NanomeshesEngineeringApplied PhysicsGraphene +3

High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes

Zhe Zhuang, Xu Guo, Bin Liu, +14

Advanced Functional Materials

EngineeringOptoelectronic DevicesSemiconductorsPhotodetectorsLight-emitting Diodes +14

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga ₂ O ₃ nanowire arrays

Liying Zhang, Xiangqian Xiu, Yuewen Li, +8

Nanophotonics

Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper

Kei May Lau, Ka Ming Wong, Xinbo Zou, +1

Optics Express

Patterned Si SubstrateOptical MaterialsEngineeringEducationOptoelectronic Devices +21

Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Junchi Yu, Tao Tao, Bin Liu, +11

Crystals

Optical MaterialsEngineeringOptical PerformanceLight-emitting DiodesPhotonics +15

3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

Ru Xu, Peng Chen, Menghan Liu, +8

IEEE Electron Device Letters

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +9

Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization

Tao Tao, Ting Zhi, Bin Liu, +13

Scientific Reports

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <i>p-n</i> Junction Termination

Ru Xu, Peng Chen, Menghan Liu, +10

IEEE Journal of the Electron Devices Society

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsCurrent On/off Ratio +5

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

Yimeng Li, Peng Chen, Xiufang Chen, +18

Advanced Optical Materials

Planar Junction FormedEngineeringGate VoltageOptoelectronic DevicesSemiconductors +16

Growth of<i>β</i>-Ga₂O₃Films on Sapphire by Hydride Vapor Phase Epitaxy

Zening Xiong, Xiangqian Xiu, Yue-Wen Li, +7

Chinese Physics Letters

Materials EngineeringMaterials ScienceEpitaxial GrowthOptical MaterialsEngineering +10