Investigating the Effect of ZnSe (ETM) and Cu2O (HTM) on Absorber Layer on the Performance of Pervoskite Solar Cell Using SCAPS-1D

Abstract

Tin perovskite (CH₃NH₃SnI₃) have attracted a lot of attention and could be a viable alternative material to replace lead perovskite in thin film solar cells. A detailed understanding on the effects of each component of a solar cell on its output performance is needed to further develop the technology. In this work, a numerical simulation of a planar hetero-junction tin based perovskite solar cell using Solar Cell Capacitance Simulator (SCAPS) to study some parameters that can influence the performance of tin PSC with Cu₂O as HTL and ZnSe as ETL performed. The thickness of absorber material, ETL and HTL, the bandgap of absorber material and ETL was investigated. Results revealed that the thickness and bandgap of the absorber material and ETL of ZnSe strongly influence the PCE of the device. The performance of the cell increases with reduction in thickness of ZnSe. ZnSe is found to be a replacement for TiO₂ which is expensive. Cuprous oxide of HTL in tin based PSC is efficient and better than the expensive spiro-MeOTAD which is easily degradable. Furthermore, results of simulation and optimization of various thicknesses indicates that ZnSe has a PCE of 21.11%, FF of 68.33%, J_SC of 33.51mA/cm² and V_OC of 0.92V. These values slightly increase after optimization of parameters to PCE of 22.28%, FF of 70.94%, J_SC of 31.01mA/cm² and V_OC of 1.01V.