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Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis technique

Materials EngineeringElectrical EngineeringEngineeringNanoelectronicsOxide ElectronicsApplied PhysicsNi-moo3 Thin FilmsSemiconductor MaterialSemiconductor Device FabricationN-type LayerThin FilmsJns Pyrolysis TechniqueMicroelectronicsSemiconductor Device