M. Balaji

Role of substrate temperature on MoO3 thin films by the JNS pyrolysis technique for P–N junction diode application

M. Balaji, J. Chandrasekaran, M. Raja · Materials Science in Semiconductor Processing · 2015 · 127 citations

Materials Science, Oxide Heterostructures, Engineering +10

Impact of annealing treatment on structural and dc electrical properties of spin coated tungsten trioxide thin films for Si/WO3/Ag junction diode

M. Raja, J. Chandrasekaran, M. Balaji et al. · Materials Science in Semiconductor Processing · 2016 · 63 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes

R. Marnadu, J. Chandrasekaran, M. Raja et al. · Journal of Materials Science Materials in Electronics · 2017 · 58 citations

Materials Science, Materials Engineering, Semiconductor Technology +8

Influence of metal work function and incorporation of Sr atom on WO 3 thin films for MIS and MIM structured SBDs

R. Marnadu, J. Chandrasekaran, M. Raja et al. · Superlattices and Microstructures · 2018 · 58 citations

Materials Science, Materials Engineering, Wo 3 +11

Structural, optical and electrical properties of Ru doped MoO3 thin films and its P–N diode application by JNS pyrolysis technique

M. Balaji, J. Chandrasekaran, M. Raja et al. · Journal of Materials Science Materials in Electronics · 2016 · 52 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +11