Publication | Open Access
Magnetic two‐dimensional layered crystals meet with ferromagnetic semiconductors
102
Citations
110
References
2020
Year
Magnetic PropertiesEngineeringLow-dimensional MagnetismTwo-dimensional MaterialsUltrathin FmssSpintronic MaterialMagnetic MaterialsMagnetoresistanceMagnetismMultiferroicsQuantum MaterialsIntrinsic Ferromagnetic SemiconductorsTwo-dimensional Magnetic MaterialsMagnetic Thin FilmsIntrinsic FmssMaterials SciencePhysicsMagnetic Two‐dimensionalLow-dimensional SystemsMagnetic MaterialSpintronicsFerromagnetismNatural SciencesApplied PhysicsCondensed Matter PhysicsFunctional Materials
Two-dimensional intrinsic ferromagnetic semiconductors have long been sought, and recent breakthroughs in materials such as CrGeTe₃ and CrX₃ (X = Cl, Br, I) have spurred intensive research into new physical phenomena and concepts. This minireview summarizes recent theoretical progress on 2D intrinsic FMSs and focuses on strategies to enhance ferromagnetism. The strategies involve magnetic exchange interactions and the importance of magnetic anisotropy. The review introduces spin‑related multifunctionality in ultrathin FMSs and their van der Waals heterostructures for magnetoelectric, valleytronic, and nondissipative electronic technologies, while outlining current challenges and future prospects. An image is included.
Abstract The existence of intrinsic ferromagnetic semiconductors (FMSs) in two‐dimensional (2D) materials has been a long‐term concern and pursuit. Recent breakthroughs in the 2D FMSs, such as CrGeTe 3 and CrX 3 (X = Cl, Br, I) from bulk down to monolayer, have stimulated intensive researches on new physical phenomena and creative concepts. This minireview mainly summarizes recent progress of 2D intrinsic FMSs in theoretical side, and focuses on the ongoing strategies proposed to enhance ferromagnetism, involving the mechanisms of magnetic exchange interaction and the significance of magnetic anisotropy. Meanwhile, spin‐related multifunctionality with ultrathin FMSs and their van de Waals heterostructures in magnetoelectric, valleytronic, and nondissipative electronic technology are introduced, as well as the current challenges and the prospects in this field are discussed. image
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