Publication | Closed Access
Effect of oxygen vacancies on electrical conductivity of La<sub>0.5</sub>Sr<sub>0.5</sub>FeO<sub>3−δ</sub> from first-principles calculations
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Citations
52
References
2020
Year
First-principles CalculationsOxygen VacanciesEngineeringSemiconductor PhysicsElectrical ConductivitySemiconductor MaterialsExcess ElectronsSemiconductor NanostructuresSemiconductorsSemiconductor TransitionIi-vi SemiconductorQuantum MaterialsCompound SemiconductorMaterials ScienceSemiconductor TechnologyElectrical EngineeringPhysicsOxide ElectronicsOxide SemiconductorsSemiconductor MaterialElectrical PropertyElectrochemistryApplied PhysicsCondensed Matter PhysicsHole Compensation
Metal to semiconductor transition by hole compensation of excess electrons from <italic>V</italic><sub>O</sub> and localized <italic>V</italic><sub>O</sub> state in La<sub>0.5</sub>Sr<sub>0.5</sub>FeO<sub>3−δ</sub> under low <italic>P</italic><sub>O2</sub>.
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