A brief overview of detectors used for terahertz imaging systems

Abstract

This paper presents a short review on terahertz imaging systems based on several types of technology used in the terahertz detection schemes. Some commercial products from ThruVision Systems Limited Company have utilized GaAs Schottky diode detector at 0.25 THz to produce passive terahertz images for public and homeland security. On the other hand, TeraSense Group Incorporated Company has developed and invented a ground-breaking technology which employs sensor consisting of a matrix of plasmonic semiconductor detectors in their latest products to generate terahertz images in the 0.1 – 1.0 THz frequency range. Recently, the utilization of two-terminal unipolar nanodiodes, known as the self-switching diodes (SSDs), as terahertz detectors has shown promising results. The planar structure of SSD not only enables the device to operate at high frequencies due to low intrinsic parasitic capacitance, but also allows the realization of the device using only a single lithography step. This makes the fabrication process of SSDs faster, more simple, and at lower cost when compared to other electronic devices such as Schottky diodes. The development and recent achievement of SSDs as terahertz detectors are also presented in this paper.