Influence of properties of hematite films on electrical characteristics of isotype heterojunctions Fe <sub>2</sub> O <sub>3</sub> / <i>n</i> -CdTe

I. P. Koziarskyi, I. G. Orletsky, D. P. Koziarskyi, K. S. Ulyanytsky

Semiconductor Science and Technology · 2019 · 15 citations · 34 references

Abstract

Abstract Conditions for the production of straightening isotype heterostructures n -Fe 2 O 3 / n -CdTe by spray-pyrolysis of thin films of hematite n -Fe 2 O 3 onto n -CdTe crystalline substrates were investigated. The presence of tunneling and space charge limits of the mechanisms of motion of electrons in the forward and reverse currents through the energy barrier of the heterojunction is established on the basis of the analysis of temperature dependences of I – V -characteristics. The role of energy states at the boundary of n -Fe 2 O 3 / n -CdTe in the formation of barrier parameters is determined. On the basis of the C – V -characteristics, the manifestation of the dielectric properties of the hematite film in a wide range of voltages is investigated. A model of the energy diagram of the heterostructure, which describes the experimental electrophysical phenomena well, has been proposed.

References

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