Japanese Journal of Applied Physics · 2019 · 14 citations · 33 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsCarrier TransportSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsThin Film AnnealingAnnealingAnnealing EffectsAnnealing Temperature EffectsAnnealing Time EffectsCarrier GenerationCarrier Transport In SemiconductorsCharge Carrier DensityEvaporation Effects
Abstract The effects of vapor composition during evaporation and post-annealing conditions on the carrier density of undoped BaSi 2 films were investigated. Regardless of the vapor composition during evaporation, the carrier density after post-annealing changed in the range between 10 16 and 10 17 cm −3 by changing the post-annealing temperature. In addition, post-annealing above 920 °C induced carrier type transition from n-type to p-type. The temperature at which the carrier type transition occurred was found to depend on the surface covering material during post-annealing, which implies that the carrier type transition could originate from the change of the BaSi 2 film composition to Si-rich.
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