Nanoscale Research Letters · 2019 · 40 citations · 30 references
Natural SciencesMaterials EngineeringMaterials ScienceNanomaterialsNanotechnologyOptoelectronicsInfrared Optical MaterialsMetal Oxide NanomaterialsNanostructured Electronic MaterialsOptoelectronic DevicesOptoelectronic MaterialsThin Film Optical PropertiesExternal Quantum EfficiencyNanostructured Optoelectronic MaterialsNear-infrared RadiationNear-infrared SensingOptoelectronic PropertiesPhotodetectionPhotoelectric EffectQuantum Efficiency
Abstract The near-infrared (NIR) photoelectric properties of multilayer Bi 2 O 2 Se nanofilms were systematically studied in this paper. Multilayer Bi 2 O 2 Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 10 10 Jones). These results show that the device based on multilayer Bi 2 O 2 Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.
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Ultrafast graphene photodetector
Fengnian Xia, Thomas Mueller, Yu-Ming Lin et al. · Nature Nanotechnology · 2009 · 3.1K citations · Full text