IEEE Electron Device Letters · 2019 · 50 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageGallium Nitride (Gan) MaterialsGate Dielectric EngineeringGate DielectricsGate LeakageGate Leakage CurrentGate Oxide Leakage
Enhancement-mode (E-mode) GaN-based MIS-HEMTs still suffer from undeniable gate leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in a notorious tailing effect of the off-state current. In this letter, a gate scheme featuring SiON/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> stack dielectrics and partially recessed gate barrier has been employed in the AlGaN/GaN MIS-HEMTs. A high on/off current ratio over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> and a small threshold voltage (Vth) hysteresis less than 20 mV are achieved in the fabricated E-mode devices with a Vth around 2.5 V, mainly owing to the reduction of the net positive fixed charge density in the SiON/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate stack confirmed by the C-V measurements. Meanwhile, a good performance uniformity on 6-inch wafer is achieved which demonstrates the promising scheme for fabricating GaN-based E-mode MIS-HEMT products.
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