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Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on Equivalent Potential Method

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceEquivalent Potential MethodAlgan/gan HemtsOptoelectronicsAnalytical Model