Publication | Closed Access
High-<i>κ</i> dielectric ε-Ga<sub>2</sub>O<sub>3</sub> stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure
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Citations
32
References
2019
Year
Oxide HeterostructuresPhotonicsMaterials ScienceDielectric ConstantTransparent Heteroepitaxial StructureEngineeringPhysicsOxide/yttria-stabilized ZirconiaOptical PropertiesOxide ElectronicsApplied PhysicsCondensed Matter PhysicsMist CvdAtmospheric PressureGallium OxideSemiconductor MaterialEpitaxial GrowthChemical Vapor Deposition
The dielectric constant of metastable ε-Ga<sub>2</sub>O<sub>3</sub> was evaluated for the first time by using a transparent heteroepitaxial structure of ε-Ga<sub>2</sub>O<sub>3</sub>/indium tin oxide/yttria-stabilized zirconia.
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