Nonvolatile ZnO-Based Ferroelectric Field Effect Transistors for Active-Matrix Organic Light-Emitting Diode Display

Abstract

The active-matrix organic light-emitting diode (AMOLED) is an energy efficient display technology due to its nonvolatility. However, the complex circuit structure obstructs its performance improvement. Here, ferroelectric field effect transistors (FeFETs) consisting of a BiFeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (BFO) ferroelectric gate layer, a ZnO semiconductor channel layer, and a La <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.6</sub> Sr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.4</sub> MnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> bottom-gate electrode were fabricated. A large OFF/ON resistance ratio (~ 4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ) was obtained, and the carrier accumulation or depletion at the ZnO/BFO interface owing to the ferroelectric field effect was confirmed by Hall measurements. Based on the high performance ZnO-based FeFET, a simplified AMOLED pixel circuit was designed and experimentally verified. The estimated aperture ratio was improved greatly from 28% to 37%. Furthermore, the operation speed of the FeFET could be as fast as 5 ns. These findings are of great significance in developing high performance AMOLED display devices.