High power surface emitting InGaN superluminescent light-emitting diodes

Abstract

A high power InGaN superluminescent light-emitting diode emitting normal to the substrate is demonstrated. The device uses a structure in which a monolithically integrated turning mirror reflects the light at both ends of the in-plane waveguide to direct amplified spontaneous emission downward through the transparent GaN substrate. Record optical peak powers of >2 W (both outputs) are reported under pulsed operation at 1% duty cycle. A broad, smooth emission spectrum with a FWHM of 6 nm centered at 416 nm is measured at peak output and ascribed to very low feedback associated with the turning mirror and antireflection coating.