Evaluation and Analysis of Temperature-Dependent Dynamic $R_{{{\mathrm{DS}}},{{\mathrm{ON}}}}$ of GaN Power Devices Considering High-Frequency Operation

Abstract

Commercial enhancement-mode gallium nitride (GaN) HEMTs device is a superior candidate for high-frequency power electronics applications. However, GaN power devices have a unique dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS,ON</sub> problem which increases the conduction loss of the converter during operation. In this article, the temperature-dependent dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS,ON</sub> at high frequency is evaluated experimentally for the first time using the double-pulse test (DPT) and multiple-pulse test (MPT) techniques. Different temperature-dependent dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS,ON</sub> characteristics between the DPT and the MPT at high temperatures are investigated. The significance of the dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS,ON</sub> 's temperature dependence is important since GaN devices are typically operating at elevated temperatures. The results suggest that the traditional wafer-level test method using one pulse or two pulses and the MPT without heating consideration or at lower pulse frequency may not be sufficient to evaluate the dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS,ON</sub> effect. Combined with high-frequency, high-voltage, and high-current stress, high operating temperatures result in severe R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS,ON</sub> degradation; hence, there is a diminished return on operating the devices at high temperatures.