Sub-10-nm Silicene Nanoribbon Field Effect Transistor

Abstract

In this article, we present that a bandgap can be generated in silicene nanoribbons (SiNRs) by codecorating them with lithium and chlorine atoms on two sides. Besides, using the semiempirical calculations, the performance of the functionalized SiNR as high-performance (HP) channel material for field effect transistor (FET) has been investigated. Based on the codecorated SiNR, a sub-10-nm FET is simulated and its performance parameters are analyzed. In addition, the performance of the simulated FET is compared with the sub-10-nm state-of-the-art FETs available in the literature. The comparative analysis shows that the proposed FET offers improved performance over the reported sub-10-nm FETs. The simulation results presented in this article reveal the remarkable potential of the codecorated SiNR for future sub-10-nm technology nodes.