Journal of Materials Chemistry C · 2019 · 18 citations · 41 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIon-conducting MaterialsIonic ConductivityIonic ConductorsMemory DevicesMemristive MaterialsAnalog Switching BehaviorMemristive CircuitsMemristive MemoryMixed Ionic-electronic ConductionMixed Ionic-electronic ConductivityMixed Ionic-electronic ConductorsMultilevel Resistance StatesValence Change Memory Materials
The mixed ionic-electronic conductor La<sub>2</sub>NiO<sub>4+δ</sub> is used to build interface-type valence-change memories showing transient, multilevel and analog-type memristive properties.
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Memristive switching mechanism for metal/oxide/metal nanodevices
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Resistive switching in transition metal oxides
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Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
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