Publication | Open Access
Investigating the effect of chirality, oxide thickness, temperature and channel length variation on a threshold voltage of MOSFET, GNRFET, and CNTFET
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2019
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Device ModelingElectrical EngineeringChannel Length VariationEngineeringNanoelectronicsElectronic EngineeringBias Temperature InstabilityApplied PhysicsThreshold VoltagePower Semiconductor DeviceMicroelectronicsSemiconductor Device
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