Analysis of Self Heating Effect in DC/AC Mode in Multi-Channel GAA-Field Effect Transistor

Abstract

In this article, the self-heating effect (SHE) of both dc and ac for a three-channel nanowire-field effect transistor (FET) is investigated and analyzed. In the dc mode, as ΔT <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> (definition: T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> -300 K) increases to 65 K, the transistor suffers from an Ion degradation of 3.8% along with a R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of 4.875 [K/μW]. In the ac mode, as the heating time (same as the pulse time) increases, the heat is accumulated more and the cooling time increases accordingly. It is confirmed that ΔT <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> decreases as the device operating frequency increases and ΔT <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> saturates to about 40 K at 4 GHz. Finally, the thermal characteristics and the lifetime are analyzed while changing the duty cycle to 25%, 50%, and 75%. It shows that ΔT <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> increases to 38, 42, and 45 K, respectively, and HCI and BTI lifetime can be increased up to two times and three times, respectively.