Publication | Open Access
Electronic engineering of a tetrathiafulvalene charge-transfer salt <i>via</i> reduced symmetry induced by combined substituents
15
Citations
50
References
2019
Year
EngineeringTcnq BandwidthSolid-state ChemistryChemistryCharge TransportElectronic StructureTheoretical ElectrochemistryElectronic EngineeringQuantum MaterialsCharge SeparationCharge ExtractionCharge Carrier TransportMetallic Charge-transfer SaltMaterials ScienceCombined SubstituentsMolecular ElectrochemistryPhysical ChemistrySegregated StacksCrystallographyElectrochemistryElectronic MaterialsApplied PhysicsCondensed Matter Physics
A 1 : 1 metallic charge-transfer salt is obtained by cosublimation of (Z,E)-(SMe)2Me2TTF and TCNQ. X-ray diffraction studies confirm the formation of segregated stacks comprising donor and acceptor molecules in [(E)-(SMe)2Me2TTF](TCNQ). The crystal packing features lateral SS interactions between TTF stacks, which is in sharp contrast to that in (TTF)(TCNQ). Structural analysis and theoretical studies afford a partial charge-transfer (ρ ≈ 0.52), leading to a system with the electronic structure close to quarter-filled. Resistivity measurements reveal that this material behaves as a metal down to 56 K and 22 K at 1 bar and 14.9 kbar, respectively. The thermopower is negative in the metallic regime, indicating the dominant role of the acceptor stacks for the observed conducting behavior. Analysis of single-crystal EPR spectra shows the remaining spin susceptibility at 4.3 K, suggesting the importance of the Hubbard U correction. These results highlight the judicious engineering of electronic and geometrical effects on the TTF core; the combined use of methyl and thiomethyl groups has decreased the TCNQ bandwidth while maintaining the segregated stacks, converting the metal to insulator (M-I) transition to more 4kF like. In addition, the enhanced SS contacts between the TTF stacks lead to more rapidly decreasing M-I transition temperature under various pressures.
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