Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Abstract

Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at 1310 nm are promising sources for high-speed and high-capacity communication applications. We report on the stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis (001) silicon substrate by solid-source molecular beam epitaxy. Optical pulses as short as 1.7 ps at a pulse repetition rate or inter-mode beat frequency of 9.4 GHz are obtained. A minimum pulse-to-pulse timing jitter of 9 fs, corresponding to a repetition rate line width of 400 Hz, is demonstrated. The generated optical frequency combs yield exceptional low amplitude jitter performance and comb widths exceed 5.5 nm at a -3 dB criteria, containing more than 100 comb carriers.