III-V-on-Silicon Integration: From Hybrid Devices to Heterogeneous Photonic Integrated Circuits

TLDR

Heterogeneous integration of III‑V materials onto silicon photonics has advanced rapidly, enabling complex on‑chip optical systems and driving next‑generation, low‑power, high‑efficiency communications while packaging and thermal‑management improvements continue to evolve. The paper reports recent results on hybrid III‑V on Si transmitters, receivers, and packaged modules for high‑speed optical communications and reviews recent advances to benchmark performance. The study focuses on hybrid lasers, modulators, and photodetectors to build optical modules and photonic integrated networks that meet market specifications, and includes a review of recent advances for benchmarking. The authors present latest results on hybrid III‑V on Si transmitters, receivers, and packaged optical modules achieving high‑speed optical communications.

Abstract

Heterogeneous integration of III-V materials onto silicon photonics has experienced enormous progress in the last few years, setting the groundwork for the implementation of complex on-chip optical systems that go beyond single device performance. Recent advances on the field are expected to impact the next generation of optical communications to attain low power, high efficiency and portable solutions. To accomplish this aim, intense research on hybrid lasers, modulators and photodetectors is being done to implement optical modules and photonic integrated networks with specifications that match the market demands. Similarly, important advances on packaging and thermal management of hybrid photonic integrated circuits (PICs) are currently in progress. In this paper, we report our latest results on hybrid III-V on Si transmitters, receivers and packaged optical modules for high-speed optical communications. In addition, a review of recent advances in this field will be provided for benchmarking purposes.