Applied Physics Express · 2019 · 46 citations · 53 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCutoff FrequencyGallium NitrideGate LeakageGate Leakage CurrentGate Oxide LeakageHigh-electron-mobility TransistorsSiliconSubthreshold Swing
We report an 80 nm gate-length In0.17Al0.83N/GaN high-electron mobility transistor (HEMT) on silicon substrate with a record low gate leakage current of 7.12 × 10−7 A mm−1, a record high on/off current ratio of 1.58 × 106, and a steep subthreshold swing of 65 mV dec−1, which are excellent features among the reported InAlN/GaN HEMTs on Si. Due to the excellent DC performance, a current gain cutoff frequency fT of 200 GHz is achieved, resulting in fT × Lg = 16 GHz μm for GaN HEMTs on Si which to the best of our knowledge is a new record.
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GaN-Based RF Power Devices and Amplifiers
Umesh K. Mishra, Likun Shen, T.E. Kazior et al. · Proceedings of the IEEE · 2008 · 1.8K citations
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 336 citations