Materials Research Express · 2019 · 12 citations · 37 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsHeat TransferSemiconductor MaterialsElectrical ConductivityHeat ConductionSemiconductor Device MaterialsThermal Properties Of MaterialsThermal Properties Of SemiconductorsThermoelectric MaterialsBarrier Layer FormationThermoelectric Energy ConversionThermoelectric PropertiesThermoelectric SemiconductorsThermoelectric Transport Coefficients
The interfacial diffusion between the electrode and thermoelectric legs is a key factor to determine thermoelectric (TE) module performance. Metal elements M (Sn, Ni, Ag, Cu) are frequently used in lead-free solder SAC serials and barrier layers. M’s effects on thermoelectric properties are investigated in this work, through doping 0.1 wt% M in Bi 0.5 Sb 1.5 Te 3 (BST) prepared by melting and spark plasma sintering method. The results show that the additive of Ag and Cu could enhance the average ZT value 69.4% and 75.5% in the temperature from 323 K to 573 K, and transfer ZT summit to 423 K, while Sn and Ni doping have little influence on the BST’s thermoelectric performance. The ZT peak value of Cu doped BST reaches 1.01 at 423 K, and Ag 0.96 at 423 K. This work exhibits a prospect that the efficiency of thermoelectric device can be improved by finely choosing different solders at cold and hot side of leg-electrode joint at different applied temperature.
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New Directions for Low‐Dimensional Thermoelectric Materials
M. S. Dresselhaus, Gang Chen, Ming Tang et al. · Advanced Materials · 2007 · 4K citations
High-performance nanostructured thermoelectric materials
Jing‐Feng Li, Weishu Liu, Li‐Dong Zhao et al. · NPG Asia Materials · 2010 · 962 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +12