Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications

The mechanism of swirl defects formation in silicon

V. V. Voronkov · Journal of Crystal Growth · 1982 · 511 citations

Natural Sciences, Materials Engineering, Materials Science +11

Development of oxygen transport model in Czochralski growth of silicon crystals

Andrey Smirnov, V.V. Kalaev · Journal of Crystal Growth · 2008 · 89 citations

Engineering, Materials Engineering, Materials Science +16

Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth

D.P. Lukanin, V.V. Kalaev, Yu.N. Makarov et al. · Journal of Crystal Growth · 2004 · 61 citations

Engineering, Materials Engineering, Materials Science +16

Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

I. Yu. Evstratov, V.V. Kalaev, Alexander I. Zhmakin et al. · Journal of Crystal Growth · 2001 · 48 citations

Natural Sciences, Materials Science, Physics +16

Lateral photovoltage scanning (LPS) method for the visualization of the solid–liquid interface of Si1−xGex single crystals

N. V. Abrosimov, Anke Lüdge, H. Riemann et al. · Journal of Crystal Growth · 2002 · 44 citations

Engineering, Materials Engineering, Materials Science +15