SiN/Si double-layer platform for ultralow-crosstalk multiport optical switches

Abstract

We experimentally demonstrate a double-layer platform of silicon nitride and silicon for ultralow-crosstalk multiport optical switches. By using a silicon nitride overpass with a large gap of 1.5 µm, we achieve a crosstalk of less than -50 dB and -45 dB almost entirely in the C-band for 4 × 4 and 16 × 16 switches, respectively. To demonstrate the scalability of the platform, we also measured a 32 × 32 passive test device and show that a worst-case crosstalk of less than -50 dB is feasible with appropriate gate switches.