Publication | Open Access
CVD of AgI Complexes with Tertiary Phosphines and Perfluorinated Carboxylates—A New Class of Silver Precursors
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2001
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EngineeringThin Film Process TechnologyChemistryChemical DepositionChemical EngineeringElectron MicroscopyAgi ComplexesThin Film ProcessingMaterials ScienceInorganic ChemistryOptoelectronic MaterialsInorganic SynthesisSilver PrecursorsSurface CharacterizationNanomaterialsCoordination ComplexMaterials CharacterizationSurface ScienceMolecular ComplexThin FilmsTertiary PhosphinesSilver LayersChemical Vapor DepositionSolar Cell Materials
C2F5COOAgPMe3 (1) and C2F5COOAg (2) have been used as precursors for the CVD of silver layers in the temperature range 493–623 K. The thin films obtained were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), scanning tunneling electrochemical microscopy (STEM), X-ray photoelectron spectroscopy (XPS), and temperature variable infrared (IR) measurements. The SEM images of Ag films grown from 2 exhibited a surface with a grain size in the range 0.4–1.5 μm, whereas from 1 the size was ∼0.1 μm. This was confirmed by the STEM studies. The better stability of 1 in the vapor phase was proved by temperature variable IR spectra (373–523 K). Mass spectrometry (MS) images confirmed the presence of the monomeric and dimeric species, and the recombination ions transported in vapors. The XPS image analysis of the silver layers revealed the presence of some carbon impurities. The films demonstrated good adhesion to silicon substrates.