Chemistry of Materials · 2007 · 152 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceInorganic ChemistryMaterials ChemistryNanomaterialsCrystal ChemistryInorganic NanoparticlesInorganic SynthesisNanomaterials SynthesisSolid-state SynthesisX-ray CrystallographyNanorodsNanostructured Material SynthesisPowder DiffractionPowder Diffraction AnalysisPowder X-ray DiffractionSemiconductor NanorodsSolvothermal Synthesis
High-quality Bi 2 S 3 and Sb 2 S 3 nanorods on a large scale were successfully synthesized by the solvothermal treatment of a novel kind of single-source precursors (SSPs), metal di- n -octyl-dithiophosphates (M[S 2 P(OC 8 H 17 ) 2 ] 3, M = Bi, Sb). The X-ray powder diffraction (XRD) patterns show that both of these products belong to the orthorhombic M 2 S 3 phase. The experimental results show that the Bi 2 S 3 nanorods can be easily prepared in air at ≥140 °C for 5 h in the presence of oleylamine. Transmission electron microscopy (TEM) images show the rodlike appearance of Bi 2 S 3 with a diameter of 7−21 nm and length of several hundred nanometers under the various reaction conditions. The effects of reaction parameters, such as reaction time, temperature, and concentration of the precursor, on the growth of nanorods were discussed in detail. The mechanism of the formation process of the nanorods was proposed. We also demonstrate that this method can be extended to the synthesis of Sb 2 S 3 nanorods, which have an average diameter in the range of 45 nm and a length in the range of 1 μm. The optical absorption experiment shows that these nanorods are semiconductor with bandwidth E g = 1.67 eV for Bi 2 S 3 and 1.76 eV for Sb 2 S 3, both near to the optimum for photovoltaic conversion, suggesting these nanorods could be used in solar energy and photoelectronic applications.
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Logic Circuits with Carbon Nanotube Transistors
Adrian Bachtold, P. Hadley, Takeshi Nakanishi et al. · Science · 2001 · 2.6K citations · Full text
Engineering, Computer Engineering, Electrical Engineering +17
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