Deposition of Thin Films of Gallium Sulfide from a Novel Single-Source Precursor, Ga(S₂CNMeHex)₃, by Low-Pressure Metal−Organic Chemical Vapor Deposition

Abstract

Polycrystalline (α-Ga2S3 films have been prepared from tris(N,N-methylhexyldithiocarbamato)gallium(III), Ga(S2CNMeHex)3, by LP-MOCVD. The films were grown from 475 to 500 °C on GaAs(111) single-crystal substrates and characterized by XPS, EDAX, SEM, and XRD. XPS analysis shows only gallium and sulfur peaks are present. These studies demonstrate that dithiocarbamate compounds are attractive single-source precursors for the deposition of metal sulfide thin films.