Metal halide perovskites for resistive switching memory devices and artificial synapses

Bixin Li, Wei Hui, Xueqin Ran, Yingdong Xia, Fei Xia, Lingfeng Chao, Yonghua Chen, Wei Huang

Journal of Materials Chemistry C · 2019 · 115 citations · 76 references

Concepts

Abstract

This article highlights recent developments of emerging metal halide perovskite based resistive switching memory devices and artificial synapses.

References

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