Concepedia

Progress in detector properties of heteroepitaxial diamond grown by chemical vapor deposition on Ir/YSZ/Si(001) wafers

E. Berdermann, K. Afanaciev, M. Ciobanu, Martin C. Fischer, S. Gsell, M. Kiš, S. Lagomarsino, W. Lohmann, M. Mayr, M. Pomorski,

Diamond and Related Materials · 2019 · 24 citations · 25 references

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References

25

Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

M. Schreck, S. Gsell, Rosaria Brescia et al. · Scientific Reports · 2017 · 249 citations · Full text

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Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique

H. Pernegger, S. Roe, P. Weilhammer et al. · Journal of Applied Physics · 2005 · 211 citations · Full text

, , +17

Epitaxial Growth of Diamond on Iridium

Kazuki Ohtsuka, Kazuhiro Suzuki, Atsuhito Sawabe et al. · Japanese Journal of Applied Physics · 1996 · 152 citations

, , +14

A route to diamond wafers by epitaxial deposition on silicon via iridium/yttria-stabilized zirconia buffer layers

S. Gsell, Th. S. Bauer, J. Goldfuß et al. · Applied Physics Letters · 2004 · 127 citations · Full text

, , +16

Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films

M. Schreck, F. Hörmann, H. Röll et al. · Applied Physics Letters · 2001 · 114 citations

, , +17