Concepedia

Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials

T. Zhang, David Guérin, Fabien Alibart, D. Troadec, D. Hourlier, G. Patriarche, Ali Yassin, Maïténa Oçafrain, Philippe Blanchard, Jean Roncali,

Nanoscale Advances · 2019 · 12 citations · 36 references

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Concepts

Abstract

Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a requisite for better performance.

References

36

Handbook of chemistry and physics

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Size effect on the melting temperature of gold particles

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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Feng Pan, Shuang Gao, Chen Chen et al. · Materials Science and Engineering R Reports · 2014 · 1.4K citations

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Observation of conducting filament growth in nanoscale resistive memories

Yuchao Yang, Peng Gao, Siddharth Gaba et al. · Nature Communications · 2012 · 1.2K citations · Full text

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Polyaniline Nanofiber/Gold Nanoparticle Nonvolatile Memory

Ricky J. Tseng, Jiaxing Huang, Jianyong Ouyang et al. · Nano Letters · 2005 · 830 citations

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