A Novel Negative Capacitance Tunnel FET With Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation

Abstract

In this letter, a novel negative capacitance tunnel FET (NC-TFET) design based on junction depleted-modulation is proposed and experimentally demonstrated with sub-60mV/dec subthreshold swing (SS). By a striped gate stack design with integrated ferroelectric Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , the fabricated Si NC junction-modulated TFET (NC-JTFET) exhibits steeper SS, higher ON-current for almost two decades than Si TFET without OFF-current degradation, as well as nearly non-hysteresis behavior. The experimental results show the great potential of NC-JTFET for ultralow-standby-power IoT applications.