2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers

Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4-μm optoelectronic device applications

Sadao Adachi · Journal of Applied Physics · 1987 · 432 citations

Natural Sciences, Materials Engineering, Materials Science +17

Surface reconstruction phase diagrams for InAs, AlSb, and GaSb

Allan S. Bracker, M. J. Yang, B. R. Bennett et al. · Journal of Crystal Growth · 2000 · 142 citations

Natural Sciences, Materials Engineering, Materials Science +12

Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb

Scott J. Maddox, Stephen D. March, Seth R. Bank · Crystal Growth & Design · 2016 · 107 citations

Engineering, Materials Engineering, Materials Science +17

GaSb -based 2.X μm quantum-well diode lasers with low beam divergence and high output power

Marcel Rattunde, J. Schmitz, G. Kaufel et al. · Applied Physics Letters · 2006 · 69 citations

Engineering, Electrical Engineering, Electronic Materials +16

High-power, high-efficiency laser diodes at JDSU

Matthew Peters, Victor Rossin, Matthew J. Everett et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2007 · 44 citations

Engineering, Electrical Engineering, Materials Science +16