A Wideband High Efficiency Ka-Band MMIC Power Amplifier for 5G Wireless Communications

Abstract

A compact wideband Ka-band monolithic microwave/ millimeter-wave integrated circuit (MMIC) power amplifier (PA) is demonstrated using a 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) Gallium Arsenide (GaAs) process. The proposed harmonic load-pull and radial stub matching technique have been employed to achieve wideband and high-efficiency performance. The fabricated PA exhibits a measured output power of 24 dBm, gain of 20 dB and 35% power added efficiency (PAE). The PA has a wideband performance in which the power maintains higher than 23 dBm, and the PAE is higher than 30% over a wide frequency range from 25 to 34 GHz.