Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO₂ as a Dielectric

Abstract

This paper demonstrates a reduction in the gate leakage current and improvement in transistor characteristics in thermally grown TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /AlGaN/GaN heterostructure-based metal-oxide-semiconductor highelectron-mobility transistors (MOS-HEMTs). In contrast to the conventional AlGaN/GaN HEMTs, thermionic field emission through gate is not the dominant current transport mechanism for the thermally grown TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /AlGaN interface. The gate current is greatly affected by the properties of the oxide material and oxide-semiconductor interface in addition to the property of the barrier layer. The MOS-HEMTs with a 3.4-nm-thick TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate insulator exhibits a low gate leakage current of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> Acm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , which leads to superior device performances in terms of saturation drain current, peak transconductance,subthreshold swing, and unity gain frequency of 620 mA/mm, 158 mS/mm, 75 mV/decade, and 7 GHz, respectively, for a 400-nm gate length device. This is further augmented by an increase in ON/OFF ratio to 5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> and a large reduction in the subthreshold leakage current by at least two orders of magnitude in comparison to that of a control HEMT. Trap-assisted tunneling (TAT) and Poole-Frenkel (PF) emission are found to be the dominant current mechanisms for gate leakage at high temperatures and moderate electric field. The activation energy of traps in PF emission is found to be 0.49 eV, and the extracted trap energy levels for the TAT are found to be in the range of 1.7-2.2 eV. The reverse bias current is found to saturate at high voltages when the field across the diode also saturates. The transistor characteristics improvement is largely ascribed to an increase in 2-D electron gas (2DEG) density.