On the Ammonia Sensing Performance and Transmission Approach of a Platinum/Nickel Oxide/GaN-Based Metal-Oxide-Semiconductor Diode

Abstract

New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diodetype ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaNbased MOS diode shows good ammonia sensing performance at relatively high temperatures (≥423 K). A very high sensing response of 244.2 under 1000 ppm NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /air gas and a low detecting level of 2 ppm NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.