A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification

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Growth and perfection of crystals

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Development of high‐performance multicrystalline silicon for photovoltaic industry

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Study of evolution of dislocation clusters in high performance multicrystalline silicon

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Recombination activity of Σ3 boundaries in boron-doped multicrystalline silicon: Influence of iron contamination

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