Publication | Closed Access
Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si
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Citations
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References
2019
Year
Materials ScienceElectrical EngineeringEngineeringFerroelectric ApplicationOxide ElectronicsApplied PhysicsFerroelectric CapacitorsSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthAtomic Layer DepositionPhysical Properties
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