Publication | Open Access
InAlAs/InGaAs/InP heterostructures for microwave photodiodes grown by molecular beam epitaxy
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Citations
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References
2019
Year
Materials SciencePhotonicsElectrical EngineeringEpitaxial GrowthEngineeringRf SemiconductorOptical PropertiesApplied PhysicsSchottky BarrierPhotoelectric MeasurementInp Substrate CleaningMicrowave PhotodiodesMolecular Beam EpitaxyMicroelectronicsOptoelectronicsCompound Semiconductor
Pre-epitaxial (001)InP substrate cleaning, growth of In0.52Al0.48As/In0.53Ga0.47As heterostructures lattice-matched to InP substrate by molecular beam epitaxy technique and manufacturing processes of microwave photodiodes with Schottky barrier are developed in this work.
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