Characterization of 3.3 kV and 6.5 kV SiC MOSFETs

Abstract

Previously our group reported 1700V SiC MOSFET technology and suggested its solution. Over 3.3 kV unipolar SiC devices are also expected to be more efficient than Si based devices while many challenges for widespread adoption of SiC devices still exist. This paper presents static and dynamic characteristics of 3.3 kV and 6.5 kV SiC MOSFETs with RDS(on) of 30 mOmega and 129 mOmega, revealing the effects of 80 % and 75 % switching loss reduction respectively compared with Si IGBTs and diodes. Furthermore avalanche capability of the 3.3 kV MOSFET is demonstrated and achieved avalanche energy of more than 3.2J.