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Performance of a new Schottky CdTe detector for hard X-ray spectroscopy
60
Citations
9
References
2002
Year
X-ray SpectroscopyEngineeringSignificant ImprovementX-ray ImagingIi-vi SemiconductorCadmium TellurideX-ray TechnologyInstrumentationCompound SemiconductorHealth SciencesElectrical EngineeringPhysicsSemiconductor MaterialMicroelectronicsHard X-raySpectroscopyX-ray DiffractionApplied PhysicsCdte SurfaceX-ray Optic
We report the significant improvement of the spectral properties of a cadmium telluride (CdTe) detector. With the use of a high quality CdTe crystal, we formed a high Schottky barrier for the holes on a CdTe surface by using a low work-function metal, indium. With a 2/spl times/2 mm/sup 2/ detector at a thickness of 0.5 mm, the leakage current is measured to be 0.7 nA at room temperature (20/spl deg/) and below 1 pA at -70/spl deg/C for 400 V bias voltage. The low leakage current of the detector allows us to operate the detector at a higher bias voltage than the previous CdTe detector. The energy resolution we achieved at room temperature is 1.1-2.5 keV FWHM from the energy range of 2 keV to 150 keV at 20/spl deg/C without any charge-loss correction electronics. At -70/spl deg/C. We obtained an energy resolution of 1.0 keV FWHM at 122 keV and 2.1 keV FWHM at 662 keV.
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